论文部分内容阅读
作为n型半导体的WO3是一种优良的气敏材料,对NOX、H2S、H2、CH4、C2H5OH、CO、NH3等气体都有良好的敏感性。目前WO3气敏材料已经基本满足社会应用的要求,但有些指标还有待改善。本文综述了WO3纳米材料气敏性能的研究进展,介绍了n型半导体WO3纳米材料的气敏传感机制,以及通过形貌控制等手段提高气敏性能、掺杂WO3纳米材料气敏性能及其复合气敏材料气敏性能的研究进展情况。作者认为WO3纳米材料在提高灵敏度、降低工作温度,特别是提高选择性和稳定性上还有很大的研究空间,并且还需克服制备的高成本,探索简易而且重复性强的制备工艺,以便更早地应用于商业化生产,为社会生产生活服务。
As an n-type semiconductor, WO3 is an excellent gas-sensitive material and has good sensitivity to gases such as NOx, H2S, H2, CH4, C2H5OH, CO, NH3 and the like. Currently WO3 gas sensing material has basically met the requirements of social applications, but some indicators still need to be improved. In this paper, the research progress of the gas sensing properties of WO3 nanomaterials is reviewed. The gas sensing mechanism of the WO3 nanostructured n-type semiconductors and the gas sensitivities of the WO3 nanomaterials are introduced. Research Progress on Gas Sensitivity of Composite Gas Sensitive Materials. The authors believe that WO3 nanomaterials have great room for improvement in sensitivity, reduction of working temperature, especially selectivity and stability, and the need to overcome the high cost of preparation to explore a simple and reproducible preparation process for Earlier used in commercial production, production and living services for the community.