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在氮气和氩气的混合气氛中,在不同N2分压下,用直流磁控溅射法在Si基片上沉积非晶态Ta–N薄膜。利用X射线衍射仪、原子力显微镜、台阶仪和纳米压痕仪、光学轮廓仪和扫描电子显微镜对沉积的薄膜进行表征。结果表明:不同N2分压下沉积的薄膜都有平整且致密的表面,表面均方根粗糙度都较小;随着N2分压的上升,薄膜沉积速率、纳米硬度和弹性模量都随之下降。所制备薄膜在室温、空气环境中具有稳定的滑动摩擦因数;当N2分压为混合气体的10%(体积分数)时,薄膜的摩擦因数最低,仅为0.27,但由于硬度较低,其磨损也相对较为严重。
In a mixed atmosphere of nitrogen and argon, amorphous Ta-N films were deposited on Si substrates by DC magnetron sputtering at different partial pressure of N2. The deposited films were characterized by X-ray diffraction, atomic force microscopy, step and nanoindenter, optical profilometer and scanning electron microscopy. The results show that the films deposited at different N2 partial pressures have flat and compact surfaces, and the root mean square roughness is small. With the increase of N2 partial pressure, the film deposition rate, nano hardness and elastic modulus follow decline. The prepared films have a stable sliding friction coefficient at room temperature and air environment. When the N2 partial pressure is 10% (volume fraction), the friction coefficient of the films is the lowest, only 0.27, but due to the lower hardness, It is also relatively serious.