论文部分内容阅读
阻止束流等离子体中电子反流到加速栅上游区域是离子推力器加速栅负电压的主要作用之一,能够阻止电子反流的加速栅电压最小值称为电子反流阈值。加速栅电压的选择直接影响到离子推力器的工作性能和运行寿命,电子反流阈值电压是确定加速栅电压的重要参考参数。基于PIC方法计算了20cm氙离子推力器加速栅电子反流阈值,并分析了加速栅孔径、栅间距、单孔引出束流电流大小对加速栅电子反流阈值电压的影响,计算结果与试验测量值符合较好。该数值模型为加速栅参数的选择和降低电子反流失效风险方法提供了参考,为下一步电子反流现象对加速栅寿命的预测分析奠定了基础。
To prevent electron beam backflow in the beam plasma to the upstream region of the accelerating grid is one of the main effects of the ion thruster accelerating grid negative voltage. The minimum value of the accelerating grid voltage that can prevent electron reflux is called the electron reflux threshold. The choice of accelerating gate voltage directly affects the working performance and operating life of the ion thruster. The threshold voltage of electron reflux is an important reference parameter for determining the accelerating gate voltage. Based on the PIC method, the threshold of accelerating gate electron reflux of 20cm Xenon thruster was calculated and the influence of accelerating grid aperture, grid spacing and single hole extraction current on the threshold voltage of accelerating gate electron reflux was analyzed. The calculation results and experimental measurements Value in line with better. The numerical model provides a reference for accelerating the selection of grid parameters and reducing the risk of electron reflux failure, which lays the foundation for the prediction and analysis of accelerating grid lifetime in the next step.