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在 U.G.Meyer离子与表面吸附气体相互作用模型的基础上 ,提出了聚焦离子束辅助淀积的淀积速率模型 .该模型包含了淀积过程中淀积作用和溅射作用的共同影响 ,指出在一定的离子束电流和反应气体流量下 ,影响淀积速率的主要因素是离子束的照射时间和扫描周期 .模型的计算结果与实验结果比较取得了较好的吻合 ,说明该模型比较精确地反映了聚焦离子束辅助淀积的物理过程 .
Based on the model of interaction between UGMeyer ion and surface adsorbed gas, a model of deposition rate for focused ion beam assisted deposition is proposed, which includes the common influence of deposition and sputtering during deposition, Under certain ion beam current and reaction gas flow rate, the main factors that affect the deposition rate are the irradiation time and scanning period of the ion beam.The calculated results are in good agreement with the experimental results, which shows that the model reflects more accurately Focusing on ion beam assisted deposition of the physical process.