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用傅里叶变换红外吸收谱和透射谱（ＦＴＩＲ），在７７Ｋ和３００Ｋ温度下测量研究用双离子注入法配合优化热退火处理制成的ＧａＡｓＥｒ，Ｏ发光材料的光吸收特性及杂质缺陷行为，观测到该材料中存在３种吸收峰并作了指认，分析了这些吸收峰与材料的离子注入及退火的关系，给出杂质和缺陷对材料ＧａＡｓ（Ｅｒ，Ｏ）高效发光的可能影响
The optical absorption properties and impurity defect behaviors of GaAsEr, O luminescent materials prepared by thermal annealing were optimized by Fourier transform infrared spectroscopy (FTIR) and transmission spectroscopy (FTIR) at 77K and 300K. Three kinds of absorption peaks were observed and identified in the material. The relationship between these absorption peaks and ion implantation and annealing was analyzed. The possible influence of impurities and defects on GaAs (Er, O)