预处理法消除晶体中氧化雾缺陷

• 作 者: 徐冬良 吴道荣 过惠芬
• 机 构: 峨嵋半导体材料研究所\\r\\r\\r\\r\\r\\r\\r\\r\\n,峨嵋半导体材料研究所\\r\\r\\r\\r\\r\\r\\
• 出 处: 稀有金属
• 发表日期: 1990年02期
• 关键词: 雾缺陷 氧化层错 金属杂质 吸杂 单晶硅片 预处理法 氧化工艺 晶体缺陷 预热处理 表面层

消除氧化雾缺陷是提高单晶硅片质量的关键之一。氧化雾缺陷是由重金属杂质引起的,它的危害在于它能导致氧化层错,使器件成品率下降。消除氧化雾缺陷主要有以下两方面措施:1.保证氧化工艺的高纯条件,防止金属杂质的污染;2.提高硅片吸杂能力,以消除金属杂质对硅片表面层的影响。本文根据氧化雾缺陷的性质和单晶中的氧行为,对晶体进行了预热处理试验,并观察

Elimination of oxidative fog defects is one of the keys to improve the quality of monocrystalline wafers. Oxidation fog defects caused by heavy metal impurities, its harm is that it can lead to oxide layer fault, the device yield decline. Elimination of oxidative fog defects mainly in the following two measures: 1. To ensure the high purity of the oxidation process conditions, to prevent contamination of metal impurities; 2 to improve the suction capacity of silicon to eliminate the metal impurities on the silicon surface layer. Based on the nature of the oxidative fog defects and the oxygen behavior in the single crystal, the crystal was preheated and observed