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采用ZnSe和Na3AlF6两种经典介质材料构造一维光子晶体,缺陷层介质为Na3AlF6。利用传输矩阵法对带有缺陷的一维光子晶体的传光特性进行了理论分析,并得到其带隙特性。分别数值研究了参考光子晶体以及应变前后测量光子晶体的透射谱,分析结果表明光子晶体所受的纵向应变与其缺陷峰波长之间呈线性关系,根据这种对应关系提出了一种新的测量应变的方法。由于粘贴光子晶体的基底与光子晶体的线膨胀系数不同,且温度变化也会引起构成光子晶体材料折射率的变化,导致光子晶体透射谱缺陷峰波长的漂移。为了消除温度误差,在测量光路中设置了与测量光子晶体结构相同的参考光子晶体,对温度的影响进行了补偿。实验表明,测量系统的灵敏度为6×10-4nm/με,测量范围为0～2000με。
One-dimensional photonic crystals were fabricated using two classical dielectric materials, ZnSe and Na3AlF6. The defect layer was Na3AlF6. The transmission properties of one-dimensional photonic crystals with defects were analyzed theoretically by transfer matrix method, and the bandgap characteristics were obtained. The transmission spectra of the reference photonic crystals and the measured photonic crystals before and after the measurements were numerically investigated. The results show that there is a linear relationship between the longitudinal strain of the photonic crystals and the peak wavelength of the defects. Based on this correspondence, a new measurement strain Methods. Since the linear expansion coefficient of the substrate and the photonic crystal to which the photonic crystal is pasted is different, and the temperature change also causes the change of the refractive index of the photonic crystal material, the drift of the peak wavelength of the transmission spectral defect of the photonic crystal is caused. In order to eliminate the temperature error, the reference photonic crystal with the same structure as the photon crystal was set in the measurement light path, and the influence on the temperature was compensated. Experiments show that the sensitivity of the measuring system is 6 × 10-4nm / με and the measuring range is 0 ~ 2000με.