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实验研究了厚度ｄ 对ＺｎＯ压敏电阻片残压比Ｋｒ 的影响规律， 表明残压比同样存在几何效应；实验还表明残压比Ｋｒ 随电位梯度Ｅ１ｍ Ａ成反比例下降，随平均晶粒尺寸μ的增大而增大； 找到了一个综合微观结构参数 平均晶粒尺寸μ和晶粒尺寸方差σ２ 的乘积（σ２μ）， 能较好地反映电性能与微观结构参数的关系。提出了计算机模拟微观结构模型，并用计算机模拟了残压比Ｋｒ 和厚度ｄ、Ｋｒ 和平均晶粒尺寸μ以及Ｋｒ 和乘积σ２μ的关系， 模拟结果与实验结果基本一致
The influence of the thickness d on the residual voltage ratio Kr of ZnO varistor is also studied experimentally. It is shown that the residual voltage ratio also has the same geometric effect. The experiment also shows that the residual voltage ratio Kr decreases inversely with the potential gradient E1m A and decreases with the average grain size μ And the product (σ2μ) of average grain size μ and grain size variance σ2 of a composite microstructure parameter is found, which can better reflect the relationship between the electrical properties and the microstructure parameters. The model of computer simulation microstructure was proposed and the relationship between residual pressure ratio Kr and thickness d, Kr and average grain size μ and Kr and product σ2μ was simulated by computer. The simulation results are in good agreement with the experimental results