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采用真空蒸发镀膜方法制备了MIM隧道发光结。对MIM隧道发光结的制备工艺进行了分析，阐述了各膜层的制备特点，描述了所制备的MIM结的发光特性，简单讨论了与发光相伴随的I-U特性曲线上的负阻现象。
MIM tunneling light-emitting junction was fabricated by vacuum evaporation method. The fabrication process of MIM tunneling junction was analyzed. The fabrication characteristics of each layer were described. The luminescence properties of the prepared MIM junction were described. The negative resistance of I-U characteristic curve with luminescence was simply discussed.