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利用H—700H高压透射电镜(TEM)对掺杂、非掺杂液封直拉(LEC)InP单晶缺陷进行了观察分析。在InP单晶锭上平行于(100)、(111)面切割0.5mm样片,两面作研磨,机械抛光至0.3mm。然后对(100)片的两面、(111)片的P面用Br_2:CH_3OH或Br_2:C_2H_5OH化学减薄至0.5μm左右。在双束条件下进行TEM分析。未掺杂(100)InP片中观察到大量密集位错及矩形位错环。掺Sn(111)InP片中观察到层错及以沉淀核为中心的发射位错环。利用明暗场象位移条纹边缘衬度分析确定了层错属于非本征弗兰克外秉层错。按FS/RH法则规定了位错的柏氏矢量b、(g、b)S判据及环面倾斜分析表明位错环为间隙型棱柱位错环。
The defects of doped, undoped liquid-sealed (LEC) InP single crystal were observed and analyzed by H-700H high pressure transmission electron microscope (TEM). On the InP single-crystal ingots, a 0.5 mm specimen was cut parallel to the (100) and (111) planes, ground on both sides, and mechanically polished to 0.3 mm. Then, on both sides of the (100) sheet, the (P) plane of the (111) sheet was chemically reduced to about 0.5 μm with Br_2: CH_3OH or Br_2: C_2H_5OH. TEM analysis was performed under double-beam conditions. A large number of dense dislocations and rectangular dislocation loops were observed in undoped (100) InP films. Staggered faults and emitter dislocation loops centered on the precipitated nuclei were observed for Sn (111) InP films. The analysis of the edge contrast of the fringes of the light and dark fields shows that the fault belongs to the extrinsic Frank outer barrier fault. According to the FS / RH law, the Burgers vector b, (g, b) S and the torus tilt analysis of dislocation are given to show that the dislocation loop is a gap type prismatic dislocation loop.