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本文报道用在S i台面及热氧化S iO2衬底上3C-S iC薄膜的LPCVD生长,反应生长使用的气体为S iH4和C2H4,载气为H2,采用光学显微镜、X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)、以及室温Hall测试对所生长的3C-S iC材料进行了测试与分析,结果表明在3C-S iC和S iO2之间没有明显的坑洞形成。
In this paper, LPCVD growth of 3C-S iC thin films on Si substrate and thermally oxidized SiO 2 substrate is reported. The gases used for the reaction growth are S iH 4 and C 2 H 4 and the carrier gas is H 2. The microstructures of the films are characterized by optical microscope, X-ray diffraction (XRD) , X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and room temperature Hall test on the growth of 3C-S iC material was tested and analyzed, the results show that there is no significant between 3C-SiC and Si02 Pothole formation.