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本文报告用ＰｎｐＮ型ＧａＡｓ／ＡｌＧａＡｓ结构的光电双稳器件形成的光子平行存贮器单元器件和４×４阵列器件的特性．单元器件的最小维持功耗小于３０μＷ．使器件从“关闭”态翻转到“导通”态所需的光触发功率小于８０μＷ．单元面积１６０×１６０μｍ、间距４０μｍ的存贮器４×４原理性阵列已经研制成功，这是０．８５μｍ波长范围的光子平行存贮器的首次报道．
This paper reports the characteristics of a photon parallel memory cell device and a 4 × 4 array device formed with a photo bipolar device of PnpN type GaAs / AlGaAs structure. The minimum maintenance power for a device is less than 30μW. The light triggering power needed to flip the device from the “off” state to the “on” state is less than 80μW. A 4x4 array of memory elements having a cell area of 160x160 mu m and a pitch of 40 mu m has been successfully developed, which is the first report of a photon parallel memory in the 0.85 mu m wavelength range.