论文部分内容阅读
我们在室温和600℃下用复合的二硅化钛靶在〈111〉向的裸硅片上溅射淀积了二硅化铁膜。室温下淀积的二硅化钛膜需要在900℃下进行烧结,以使其电阻率降低。而600℃下淀积的二硅化钛膜已经反应充分形成颗粒较大的没有氧沾污的多晶状,而且该膜抗氧化。将该膜在900℃下进行进一步退火,发现其晶体结构、成分、电阻率即晶粒大小没有变化。
We sputter deposited an iron disilicide film on a <111> oriented bare silicon wafer with a composite titanium disilicide target at room temperature and 600 ° C. The titanium disilicide film deposited at room temperature needs to be sintered at 900 ° C to reduce its resistivity. While the titanium disilicide film deposited at 600 ° C has reacted sufficiently to form a large, non-oxygenated, polycrystalline particle and the film is resistant to oxidation. The film was further annealed at 900 ° C and found no change in its crystal structure, composition, resistivity, ie, grain size.