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本文主要介绍一种8.4～9.5GHz微波FET低噪声放大器,该放大器采用计算机微波辅助设计,利用微带工艺技术,在聚四氟乙烯双面敷铜版制作微带电路。文章介绍了放大器的调试结果,该放大器在8.4～9.5GHz的频带内,噪声系数NF≤2.0dB、增益G_p≥20dB、增益平坦度△G_P≤±0.5dB、饱和输出功率P_(-1)≥+8dBm,目前国外在该频率范围最好水平的低噪声放大器的NF≤2.2dB,由此可见,本低噪声放大器已达到目前国外水平。放大器已提供用户使用,用户反映很好。
This article mainly introduces a 8.4 ~ 9.5GHz microwave FET low noise amplifier, the amplifier using computer-aided microwave design, the use of microstrip technology, double-sided copper-clad Teflon plate making circuit. The article introduces the debugging result of the amplifier, the noise factor NF≤2.0dB, the gain G_p≥20dB, the gain flatness △ G_P≤ ± 0.5dB and the saturated output power P _ (- 1) ≥ in the band of 8.4 ~ 9.5GHz + 8dBm, the current foreign countries in the frequency range of the best level of low-noise amplifier NF≤2.2dB, we can see that the low-noise amplifier has reached the current foreign level. The amplifier has been provided for the user to use and the user reflects well.