论文部分内容阅读
本文对60例轻型颅脑损伤（MHI）患者的ABR、LEDVEP及其中40例BEAM的变化进行了研究。结果表明：ABR异常主要表现为Ⅰ－Ⅲ峰间潜伏期的延长；LEDVEP异常表现为N70潜伏期的延长，并可伴有N70－P100波幅的降低；BEAM异常以α1频带的平均功率增高为特征，且θ／α2功率比的增高可提示幕上损伤的存在。同时，根据电生理追踪检测的结果，首次提出了轻型颅脑损伤脑功能损害程度分级的标准，为此类损伤伤害程度的法医学鉴定提供了客观依据。
In this paper, 60 patients with mild head injury (MHI) ABR, LEDVEP and 40 cases of BEAM changes were studied. The results showed that ABR abnormalities mainly manifested as prolongation of I-III peak latency; LEDVEP abnormalities manifested as prolongation of N70 latency accompanied by a decrease of N70-P100 amplitude; BEAM abnormalities were characterized by an increase of average power of α1 band The higher θ / α2 power ratio may indicate the presence of on-screen damage. At the same time, according to the result of electrophysiological tracing test, the standard of grading of brain function damage in light craniocerebral injury is first proposed, which provides an objective basis for forensic identification of injury damage.