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用热丝法制备了纳米晶硅薄膜．通过Ｒａｍａｎ散射谱及Ｘ射线谱，系统地研究了沉积气压Ｐｇ、高Ｈ２稀释及衬底与钨丝之间距离对沉积速率、纳米硅薄膜的形成和结构等的影响．计算了沉积过程中的温度场分布．讨论了沉积过程中反应基元的输运和相关的气相反应，以及Ｈ在薄膜生长中的作用，由此分析了沉积参量对薄膜结构的影响，得到了与实验相一致的结果．
Nanocrystalline silicon films were prepared by hot wire method. By Raman scattering and X-ray spectroscopy, the influence of deposition pressure Pg, high H2 dilution and the distance between the substrate and the tungsten wire on the deposition rate, the formation and the structure of the nanosilica film was studied systematically. The temperature distribution in the deposition process was calculated. The transport of reactive elements and related gas phase reactions during deposition, and the role of H in the growth of thin films were discussed. The influence of deposition parameters on the structure of thin films was analyzed and the results were consistent with the experiments.