论文部分内容阅读
利用射频磁控溅射设备制备ZnO薄膜,最终制备ZnO/Pt纳米粒子/ZnO结构的金属-半导体-金属型紫外光电探测器.研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响.结果表明,探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高.在60 V偏压下,包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W-1,包埋有Pt探测器的响应度最大值为无Pt纳米粒子探测器响应度最大值的7倍.结合对ZnO薄膜表面的表征及探测器各项性能的测试,得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射.
ZnO thin films were prepared by radio frequency magnetron sputtering equipment and finally fabricated ZnO / Pt nanoparticle / ZnO metal-semiconductor-metal UV detector.The effects of different depths of Pt nanoparticles on the ZnO / The results show that the responsiveness of the detector increases with the depth of the Pt nanoparticles in the ZnO thin film layer.When the bias voltage is 60 V, The detector with the deepest Pt achieves a maximum response of 1.4 A · W-1 at a wavelength of 365 nm, and the maximum responsivity of the embedded Pt detector is seven times the maximum response of the Pt-free nanoparticle detector. ZnO thin film surface characterization and detector performance testing, the results show that the embedded Pt nanoparticle enhancement device response performance can be attributed to the surface plasmon enhanced scattering.