论文部分内容阅读
用小角x射线散射技术研究以直流磁控溅射方法制备TiNi合金薄膜其退火生成的晶化粒子的长大行为 .发现在室温下溅射的TiNi合金薄膜存在小于 1nm尺寸的微空洞 ,将退火后薄膜的小角x射线散射强度扣除退火前微空洞产生的小角x射线散射强度 ,用这种方法得到的散射强度遵从Porod定律 ;而用通常方法扣除背底得到的散射强度结果不满足Porod定律 .TiNi合金薄膜在 733— 793K之间退火晶化粒子的长大激活能Eg=30 1kJ mol.
The small-angle x-ray scattering technique was used to study the growth behavior of the as-cast TiNi alloy films prepared by DC magnetron sputtering. The TiNi alloy films deposited at room temperature showed the existence of micro-cavities less than 1 nm in size and annealed The small-angle x-ray scattering intensity of the back film minus the small-angle x-ray scattering intensity of the microvoided cavity before annealing, the scattering intensity obtained by this method follows the Porod’s law and the scatter intensity obtained by subtracting the back from the usual method does not satisfy the Porod’s law. TiNi alloy thin films annealed at 733-793K between the crystallization activation energy Eg = 30 1kJ mol.