论文部分内容阅读
采用常规方法和分步注入法制备SOI SIMNI(SilicononInsulator SeparationbyImplantationofNitrogen)薄膜材料 .用液氦低温霍耳效应进行了分析测量 .测量结果表明 :分步注入法制备得到的样品具有低的薄层电阻R□ 和较高的载流子迁移率 .实验证明用分步注入法可以明显改善SIMNI薄膜材料的电学性能 .对实验结果和机理进行了解释 .
The SOI SIMNI (Silicon on Insulator Separation by Implantation of Nitrogen) thin film material was prepared by the conventional method and the step injection method. The analytical measurement was carried out by the liquid helium low temperature Hall effect. The measurement results show that the sample prepared by the step injection method has a low sheet resistance R And higher carrier mobility.The experimental results show that the electrical properties of SIMNI thin films can be obviously improved by the step injection method.The experimental results and mechanism are explained.