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准同轴微波多层过孔是微波多层印制技术中常用的跨层互连形式,当互连结构较为复杂时,其微波性能会对系统指标构成较大影响,目前研究微波过孔的手段还主要局限于理论推导和频域仿真。首次使用TDR仿真技术,对45°准同轴微波多层过孔进行了建模、仿真和分析,并对过孔尺寸进行了优化,所得到的微波多层过孔结构具有较理想的50Ω阻抗特性,同时在很宽的频带内展现出良好的微波特性,进而验证了TDR仿真方法在分析准同轴微波多层过孔结构上的有效性。
Quasi-coaxial microwave multilayer vias are common cross-layer interconnections used in multi-layer microwave printing technology. When the interconnection structure is complicated, the microwave performance will greatly affect the system specifications. At present, the research on microwave vias Means are also mainly limited to the theoretical derivation and frequency domain simulation. For the first time using TDR simulation technology, 45 ° quasi-coaxial microwave multilayer vias were modeled, simulated and analyzed, and the via size was optimized. The obtained microwave multilayer vias structure has the ideal 50Ω impedance Characteristics while exhibiting good microwave characteristics over a wide range of frequencies and thus validating the effectiveness of TDR simulation methods in the analysis of quasi-coaxial multi-layer microwave via structures.