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低压气相合成金刚石薄膜,具有广泛的应用前景。本研究采用热解 CVD 法生长金刚石薄膜,反应气体为含 C、H、O 的有机低分子化合物和氢气,基板为硅片。实验结果表明,反应气体混合比、流量、压力、基板温度、热钨丝温度,以及基板预处理方法等工艺条件,对沉积产物的结构和性能都有重大影响。当上述各工艺都在合适范围时,能稳定地生长出金刚石多晶薄膜。在薄膜的拉曼谱中,呈现尖锐的金刚石特征峰。根据薄膜的反射高能电子衍射环
Low-pressure gas-phase synthesis of diamond films, has a wide range of applications. In this study, a diamond film was grown by pyrolysis CVD. The reaction gas was an organic low molecular compound containing C, H, O and hydrogen, and the substrate was a silicon wafer. The experimental results show that the reaction conditions such as gas mixing ratio, flow rate, pressure, substrate temperature, hot tungsten temperature and substrate pretreatment methods all have great influence on the structure and properties of the deposited products. When the above processes are in the proper range, the diamond polycrystalline thin film can be stably grown. In the Raman spectrum of the film, a sharp peak of diamond appears. According to the reflection of the film high-energy electron diffraction ring