论文部分内容阅读
采用在阳极化反应时改变电流强度的办法 ,在高掺杂的 P型硅 (111)衬底上制备了具有不同多孔度的双层结构多孔硅层 .用超高真空电子束蒸发技术在多孔硅表面外延生长了一层高质量的单晶硅膜 .在室温下 ,该外延硅片同另一生长有热二氧化硅的硅片键合在一起 ,在随后的热处理过程中 ,键合对可在多孔硅处裂开 ,从而使外延的单晶硅膜转移到具有二氧化硅的衬底上以形成 SOI结构 .扫描电镜、剖面投射电镜、扩展电阻和霍尔测试表明 SOI样品具有较好的结构和电学性能
Using the method of changing the current intensity during the anodizing reaction, a two-layer structure porous silicon layer with different porosity was prepared on a highly doped P-type silicon (111) substrate. The ultra-high vacuum electron beam evaporation Epitaxial growth of the silicon surface layer of high-quality monocrystalline silicon film at room temperature, the epitaxial silicon wafer with another growth of silicon dioxide silicon wafer bonded together in the subsequent heat treatment, the bonding pair Can be split at the porous silicon, so that the epitaxial single crystal silicon film is transferred to the substrate with a silicon dioxide to form a SOI structure.SEM, cross-sectional projection electron microscopy, extended resistance and Hall test showed that SOI samples have better The structure and electrical properties