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根据自主研制的用于制备SiC一维纳米材料的可控气氛炉内的空间尺寸以及通气方式,设计了4种不同结构的化学气相沉积(CVD)反应室(“S”型结构,“三角”型结构,“双三角”型结构,“回”型结构),并基于CFD原理,使用Fluent软件对这4种反应室内的温度场及气流场进行了模拟,得到了各反应室内温度及气体流速的分布云图。通过比较分析发现,在达到稳态后,4种结构反应室内气孔附近的温度均比较低;但气流场模拟结果显示,“回”型结构CVD反应室内,在产物生长的基片表面附近存在气体流量最多且层流面积最大,适于SiC纳米线生长的面积最大,最适用于SiC一维纳米材料的连续制备,其结果已被实验验证。
According to the self-developed space size and aeration mode in a controlled atmosphere furnace for preparing SiC one-dimensional nanomaterials, four different chemical vapor deposition (CVD) reaction chambers (“S” “Triangular” type structure, “double triangular” type structure and “back” type structure). Based on CFD principle, Fluent software was used to simulate the temperature field and gas flow field in the four reaction chambers. The reaction chamber temperature and gas flow distribution map. Through the comparative analysis, it is found that the temperature near the stomata in the four kinds of structure reaction chambers is relatively low after the steady state is reached. However, the simulation results of the gas flow field show that in the CVD chamber with the “back” structure, near the substrate surface where the product grows It has the largest gas flow rate and the largest laminar flow area. It has the largest area suitable for the growth of SiC nanowires and is most suitable for the continuous preparation of SiC one-dimensional nanomaterials. The results have been experimentally verified.