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用分子束外延 ( MBE)技术研制出了 Al Ga N/Ga N高电子迁移率晶体管 ( HEMT)材料 ,其室温迁移率为 10 35cm2 /V· s、二维电子气浓度为 1.0× 10 13 cm - 2 ;77K迁移率为 2 6 53cm2 /V· s、二维电子气浓度为 9.6× 10 12 cm- 2 。用此材料研制了栅长为 1μm、栅宽为 80μm、源 -漏间距为 4μm的 Al Ga N/Ga N HEMT,其室温最大非本征跨导为 186 m S/mm、最大漏极饱和电流密度为 92 5m A/mm、特征频率为 18.8GH z。另外 ,还研制了具有 2 0个栅指 (总栅宽为 2 0× 80μm =1.6 mm )的大尺寸器件 ,该器件的最大漏极饱和电流为 1.33A。
Al Ga N / Ga N high electron mobility transistor (HEMT) material has been developed by molecular beam epitaxy (MBE) technology with a room temperature mobility of 10 35 cm 2 / V · s and a two-dimensional electron gas concentration of 1.0 × 10 13 cm - 2; the mobility of 77K is 2653cm2 / V · s, and the two-dimensional electron gas concentration is 9.6 × 1012cm-2. Al Ga N / Ga N HEMTs with a gate length of 1μm, a gate width of 80μm and a source-drain spacing of 4μm were fabricated with this material. The maximum extrinsic transconductance at room temperature was 186 m S / mm. The maximum drain saturation current The density is 92 5 m A / mm and the characteristic frequency is 18.8 GHZ. In addition, a large device with 20 gate fingers (20 × 80 μm total gate width = 1.6 mm) has been developed. The maximum drain saturation current of the device is 1.33A.