论文部分内容阅读
90-nm T-shaped gate InP-based In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4)As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μm.DC,RF and small-signal model characterizations were demonstrated.The maximum saturation current density was measured to be 755 mA/mm biased at V_(gs)=0.6 V and V_(ds)=1.5 V.The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_(ds)=—0.1V and V_(ds)=1.5 V.The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,respectively.The inflection point(the stability factor k=1)where the slope from-10 dB/decade(MSG) to-20 dB/decade(MAG) was measured to be 83 GHz.The smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.
(0.48) As / In_ (0.6) Ga_ (0.4) As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2 × 30 μm, a The source-drain space of 2.5 μm, and a source-gate space of 0.75 μm. DC, RF and small-signal model characterizations were demonstrated. The maximum saturation current was measured to be 755 mA / mm biased at V_ (gs) = 0.6 V and V ds = 1.5 V. The maximum extrinsic transconductance was measured to 1006 mS / mm biased at V ds = -0.1 V and V ds = 1.5 V. The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz, respectively. The inflection point (the stability factor k = 1) where the slope from-10 dB / decade (MSG) to-20 dB / decade (MAG) was measured to be 83 GHz. The smallsignal model of this device was also established, and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.