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用Y-2型X射线衍射仪,测定了在GaAs(100)衬底上,液相外延生长的Ga_(1-x)Al_xAs层的晶格失配形变,失配应力,晶面倾斜和组分X值。采用长的辐射波长和高密勒指数的晶面反射,以及尽可能简便的计算方法,达到了较好的分辨力和精确度。组分X值之绝对误差可达±0.01。可以满足GaAlAs/GaAs型发光二极管和激光器等生产工艺中测试分析要求。并对实验测量方法进行了简要评述。
The lattice mismatch deformation, mismatch stress, crystal plane tilt and group tilt of group Ga_ (1-x) Al_xAs grown on GaAs (100) substrate by liquid phase epitaxial growth were measured by Y-2 X-ray diffractometer Sub-X value. Using long wavelength and high Miller index crystal face reflection, and as easy as possible to calculate the method to achieve better resolution and accuracy. The absolute error of component X can be ± 0.01. GaAlAs / GaAs-type light-emitting diodes and lasers to meet the production process of test and analysis requirements. And a brief review of the experimental measurement methods.