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报导了用快速白光辐照、通过薄膜反应在GaAs衬底上生成单一化学相的硅化物W_5Si_3,对样品的结构方式和硅供应量对钨硅化物生成相的影响进行了讨论。
The effect of the structure of the sample and the amount of silicon supplied on the formation of tungsten silicide was also discussed with the aid of rapid white light irradiation and the formation of a single chemical phase silicide W_5Si_3 on a GaAs substrate via a thin film reaction.