,The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si subst

• 作 者: Yuan Guang-Cai Xu Zheng Zhao Su-Ling Zhang Fu-Jun Huang Jin-Zhao Huang Jin-Ying Tian Xue-Yan Xu Xu-Rong
• 机 构: Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China“,”Key Labora
• 出 处: 中国物理B（英文版）
• 发表日期: 2008年10期
• 关键词: pentacene morphology crystalline phase thin-film transistors

This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p+-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction.This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p+-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8 (A)(1 A=0.1 nm)and 14.9 A,respectively.Above the critical thickness of the thin film phase,lamellax structures are found with an increasing fraction with the increase of the film thickness.When the film thickness is fixed,the fraction of lamellax structures increases with the increase of annealing temperature.These lamellax structures axe identified as the second phase with a interplanar distance of 14.9 (A) corresponding to the pentacene triclinic phase.Furthermore,the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6 (A)/s is observed.