【摘 要】
：
Indium-doped ZnO (ZnO∶In) films are deposited on quartz substrates by rf magnetron sputtering.The effects of post-annealing on structural,electrical,optical an
【机 构】
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College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331“,”Colle
论文部分内容阅读
Indium-doped ZnO (ZnO∶In) films are deposited on quartz substrates by rf magnetron sputtering.The effects of post-annealing on structural,electrical,optical and Raman properties are investigated by x-ray diffraction,Raman scattering,Hall measurement and first-principles calculation.The results indicate that all of the ZnO∶In films have excellent crystallinity with a preferred ZnO (002) orientation.It is found that the incorporation of In can dramatically increase the intensity of the 274 cm-1 Raman mode.However,both post-annealing treatment and increasing O2 partial pressure in the process of preparing thin films can reduce the intensity of the 274 cm-1 mode or even eliminate it,and relax compressive stress of the ZnO∶In film judged by analyzing the shifts of the (002) Bragg peaks and E2 (high) mode.Finally,the origin of the 274 cm-1 mode is inferred to be the vibration of Zn interstitial (Zni) defects,which play a crucial role in the high electron concentration and low resistivity of ZnO∶In films annealed in an appropriate temperature range (450-600℃).
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