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综述了用于超大规模集成电路中互连介质的氟化非晶碳膜（ａ－Ｃ：Ｆ）的制备、化学键结构、介电常数与热稳定性、填隙能力、粘附性、热导率等性能，为开发具有新型功能的低介电常数材料提供了指导。
The preparation of fluorinated amorphous carbon films (a-C: F) for interconnecting media in very large scale integrated circuits is reviewed. The chemical bond structure, dielectric constant and thermal stability, interstitial ability, adhesion, thermal conductivity Rate and other performance, for the development of new features with low dielectric constant material provides a guide.