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在干氧和微量HCl混合气氛中生长靶的氧化层,能明显降低硅靶视像管的暗电流在标准的1时硅靶视像管中,已经获得了小于0。6nA的暗电流,比之已发表的一般硅靶管的暗流要小十倍。发现暗电流的降低主要是由于降低了表面产生速率,增加了产生的少子寿命,而对于这种低暗电流的靶,体内产生电流将是暗电流的主要成分。同时还发现将HCl氧化的硅片在氧化后或在硼扩再分布后进行氮退火,则有助于降低暗电流,减少电视图像中的亮斑点。
Growing the oxide layer of the target in a mixed atmosphere of dry oxygen and trace HCl significantly reduces the dark current of the silicon target tube. In a standard 1: 1 silicon target tube, a dark current of less than 0.6 nA has been achieved, The published general target tube of silicon should be ten times less dark. It is found that the reduction of dark current is mainly due to the reduction of the surface generation rate and the increase of the generated minority carrier lifetime. For such a dark current target, the current generated in the body will be the main component of the dark current. It has also been found that hydrogenating the HCl-oxidized silicon wafer after the oxidation or after redistribution of the boron nitrogen anneal helps to reduce dark current and reduce bright spots in the television image.