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在分析高纯锑和锡时,使用了以溴化物形式挥散基体的方法。目前的工作报导了以溴化镓和溴化砷的形式挥散基体来研究分析砷化镓中微量杂质的可能性。在测定砷化镓中的微量杂质方面,已进行过一系列工作。镓和砷与微量杂质分离通常要用两个阶段:先以 AsBr_3形式挥散砷,之后用萃取或共沉淀方法将微量杂质与镓分离。这些方法可用于测定6～9种元素杂质。用少量的КЧ-2和КБ-4离子交换剂吸附微量杂质与光普分析相配合来分析得到的富
In the analysis of high-purity antimony and tin, a method of volatilizing the matrix in the form of a bromide is used. Current work has reported the possibility of volatilizing the matrix in the form of gallium bromide and arsenic bromide to study the analysis of trace impurities in gallium arsenide. A great deal of work has been done on the determination of trace impurities in gallium arsenide. The separation of gallium and arsenic from trace impurities usually takes two stages: the arsenic is first volatilized in the form of AsBr_3, and the trace impurities are separated from gallium by extraction or coprecipitation. These methods can be used to determine 6 to 9 kinds of elemental impurities. With a small amount of КЧ-2 and КБ-4 ion exchange agent adsorption trace impurities and Pu analysis by the analysis of the rich