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研制了一种集成的GaAs-FET振荡器,它在8GHz附近,能廉价地调谐振荡频率,其调谐范围为950MHz,且功率变化小和效率高。这个性能是通过微带按装的FET与简并模谐振腔耦合而达到的,简并模谐振腔是微带盒的一部分。在改进的方案中,把一个变容管装入这种振荡器内,在6GHz附近可电调谐1GHz。
An integrated GaAs-FET oscillator has been developed that operates at around 8 GHz to inexpensively tune the oscillation frequency with a tuning range of 950 MHz with small power variations and high efficiency. This performance is achieved by coupling the microstrip-mounted FET to the degenerate mode resonant cavity, which is part of the microstrip cassette. In an improved solution, a varactor is loaded into this oscillator, which can be electrically tuned to 1 GHz around 6 GHz.