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提出一种应用于相变存储器芯片的新型开关电容电荷泵。对于16位的相变存储器芯片,系统擦写时间大于100ns,电荷泵的驱动能力至少为60mA。相比于传统开关电容电荷泵,该电荷泵根据负载电流大小自动生成一个使能信号,该信号通过控制升压模块功率管的开启与关断来调节输出电压,最终将输出电压控制在一个允许的范围内波动。采用40nm CMOS工艺对电荷泵进行设计和仿真,结果表明在5mA负载时,电源效率为87%,输出纹波为2.84mV;负载电流从0mA变化到60mA时,电源效率皆高于82%;负载电流变化在300mA/μs时,输出瞬态响应时间为1.63μs,满足相变存储器芯片的使用要求。
A novel switched capacitor charge pump for phase change memory chips is proposed. For 16-bit phase change memory chips, the system erase time is greater than 100ns, the charge pump drive capability of at least 60mA. Compared with the traditional switched capacitor charge pump, the charge pump automatically generates an enable signal according to the load current. The signal adjusts the output voltage by controlling the power switch of the boost module to turn on and off, and finally, the output voltage is controlled at an allowable The range of fluctuations. The design and simulation of the charge pump in 40nm CMOS process show that the power efficiency is 87% and the output ripple is 2.84mV at 5mA load. The power efficiency is higher than 82% when the load current is changed from 0mA to 60mA. Current changes at 300mA / μs, the output transient response time of 1.63μs, to meet the phase change memory chip usage requirements.