Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

• 作 者: NOUET Gérard2 RUTERANA Pierre
• 机 构: Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces UMR CNRS 6176 ENSICAEN,6
• 出 处: Rare Metals
• 发表日期: 2006年S2期
• 关键词: hydride MOCVD epitaxy crystalline template thick exciton phonon annealing anneal

Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AlN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AlN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.

Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AlN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AlN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.