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近来,砷化镓微波功率源器件多半采用外延材料作有源区。在国内,期望能作限累器件的体单晶工作仍在开展。努力的重点集中于进一步提高材料的纯度、温度性能、以及均匀性等几个方面,以期达到能与外延材料有相似或更高的水准。遵循毛主席“三线建设要抓紧”的伟大方针,几年来在党组织领导下,在兄弟单位的大力支持下,我们小组在这方面做了一些试验。这里对近来所经历到的某些实验现象作
Recently, gallium arsenide microwave power source devices mostly use epitaxial materials as the active region. In the country, the expectation is that the single-crystal work that can be the limiting device is still underway. Efforts to focus on further improving the purity of the material, the temperature performance, and uniformity, and several other aspects, in order to achieve with the epitaxial material has a similar level or higher. Following the great principle of Chairman Mao’s “three-lane construction should pay close attention to”, under the leadership of the party organizations over the past few years, with the vigorous support of our fraternal units, our group has done some experiments in this regard. Here for the recent experience of some of the experimental phenomenon