论文部分内容阅读
利用磁控溅射系统在玻璃衬底上制备出具有玻璃∕铝∕非晶硅的多层膜结构样品,然后在管式退火炉中以一定的温度退火,使非晶硅晶化形成多晶硅薄膜籽晶层。扫描电子显微镜(SEM)及光学显微镜测试表明,铝诱导结晶后样品中的铝层已被完全置换为连续并且厚度均匀的多晶硅层,多晶硅晶粒的平均尺寸为23μm。喇曼光谱测试和X射线衍射(XRD)分析表明,多晶硅薄膜籽晶层具有良好的结晶质量,并且具有高度的(111)择优取向。霍尔测试结果表明,铝诱导多晶硅薄膜籽晶层属于高浓度p型掺杂,掺杂浓度达到了1018/cm3。分析认为铝在非晶硅晶化过程中不仅扮演了诱导金属的角色,还起到了掺杂的作用。
A multi-layer film structure sample with glass / aluminum / amorphous silicon was prepared on a glass substrate by a magnetron sputtering system and then annealed in a tube annealing furnace at a certain temperature to crystallize the amorphous silicon to form a polycrystalline silicon film Seed layer. Scanning electron microscopy (SEM) and optical microscopy tests showed that the aluminum layer in the sample after Al-induced crystallization had been completely replaced by a continuous and uniform thickness polysilicon layer with the average size of the polysilicon grains being 23 μm. Raman spectroscopy and X-ray diffraction (XRD) analysis show that the polycrystalline silicon thin film seed layer has good crystal quality and has a high (111) preferred orientation. Hall test results show that the aluminum-induced polycrystalline silicon thin film seed layer belongs to the high concentration of p-type doping, doping concentration reached 1018 / cm3. The analysis shows that aluminum not only plays the role of inducing metal during the crystallization of amorphous silicon, but also plays a role of doping.