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介绍了利用MMT等离子体氮化工艺和炉管NO退火氮化工艺制备的超薄栅介质膜的电学特性和可靠性.结合两种氮化工艺在栅介质膜中形成了双峰和单峰的氮分布.通过漏极电流、沟道载流子和TDDB的测试,发现栅介质膜中双峰的氮分布可以有效提高器件的电学特性,更为重要的是可以极大提高器件的击穿特性.这指明了延长掺氮氧化膜在超大规模集成电路器件栅介质层中应用的寿命,使之有可能进一步跟上技术的发展.
The electrical properties and reliability of ultra-thin gate dielectric films prepared by MMT plasma nitridation process and nitric oxide annealing of furnace tubes are introduced.With the two nitriding processes, bimodal and unimodal Nitrogen distribution.According to the test of drain current, channel carrier and TDDB, it is found that the bimodal nitrogen distribution in the gate dielectric film can effectively improve the electrical characteristics of the device, and more importantly, it can greatly improve the breakdown characteristics of the device This indicates that prolonging the lifetime of the N-doped oxide film in the gate dielectric layer of VLSI devices makes it possible to further keep up with the technological developments.