正交实验法优化六方氮化硼薄膜的制备工艺

• 作 者: 李展 杨保和
• 机 构: 天津理工大学天津市薄膜电子与通信器件重点实验室,
• 出 处: 光电子.激光
• 发表日期: 2010年08期
• 关键词: 正交实验法 氮化硼 溅射功率 择优取向 射频磁控溅射法 X射线衍射(XRD) 负偏压 工艺条件 傅里叶变换红外 声表面波

采用射频磁控溅射法,在Si(100)衬底上制备了适用于声表面波(SAW)器件的氮化硼(BN)薄膜。通过正交实验法,以薄膜中六方相的纯度和取向为指标,优化了磁控溅射方法制备六方BN(h-BN)薄膜的工艺条件。利用傅里叶变换红外光(FTIR)谱和X射线衍射(XRD)谱对薄膜进行了表征,实验结果表明,溅射功率为300W、无衬底负偏压、温度为400℃和N2∶Ar=7∶8vol.%时可以制备出高纯度且高c-轴择优取向的h-BN。

A boron nitride (BN) thin film suitable for SAW devices was fabricated on Si (100) substrates by RF magnetron sputtering. By orthogonal experiment, taking the purity and orientation of the hexagonal phase in the film as an index, the process conditions of the hexagonal BN (h-BN) thin film by magnetron sputtering were optimized. The films were characterized by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The experimental results show that the sputtering power is 300W, the substrate without negative bias, the temperature is 400 ℃ and N2:Ar = 7: 8vol.%, H-BN with high purity and high c-axis preferred orientation can be prepared.