Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diode

• 作 者: Jianjun Li Tao Liu Jiachun Li
• 机 构: KeyLaboratoryofOpto-electronicsTechnology
• 出 处: 光学与光子学期刊(英文)
• 发表日期: 2013年2期
• 关键词: 650 NM RCLED MOCVD DBR 650 nmRCLEDMOCVDDBR

High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distribu