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本文运用 X 射线光电子能谱(XPS)对等离子气相反应制备的 SiC 超细粉末进行了研究,包括测定各元素的内层电子结合能以及它们在各种不同的过程中的化学位移;运用相对灵敏度因子法对表面层的元素组成进行了定量分析,并用氩离子刻蚀作了深度分布实验。结果表明:对于未经热处理的 SiC 粉末,表面上主要有一层厚度为40—50的氧的覆盖层,5分钟左右的氩离子刻蚀即可将它剥离掉.而对于经过热处理的 SiC 粉末,发现有较厚的氧化物层,氧的浓度随着离表面深度的增加而降低,但即使在经过10分钟的刻蚀后,仍有较强的 O_1s 峰,表明氧化物已渗透到体相内。
In this paper, X-ray photoelectron spectroscopy (XPS) was used to study the SiC superfine powder prepared by plasma gas phase reaction, including the determination of the inner electron binding energy of each element and their chemical shift in various processes; the relative sensitivity The elemental composition of the surface layer was quantitatively analyzed by factorial method, and the depth distribution experiment was performed by argon ion etching. The results show that for the non-heat treated SiC powder, there is mainly a layer of oxygen with a thickness of 40-50 on the surface, which can be peeled off by argon ion etching in about 5 minutes, while for the SiC powder after heat treatment, A thicker oxide layer was found and the oxygen concentration decreased with increasing depth from the surface, but there was still a strong O 1s peak even after 10 minutes of etching indicating that the oxide had penetrated the bulk phase .