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采用CZ法生长硅单晶时,其固体和熔体中的温度梯度是决定晶体生长速度的主要因素。生长速度、晶体直径和炉温三者之间存在着复杂的联系,晶体直径的控制又是一个大热容量滞后的多变量系统。因此常规仪表难以胜任。上海有色金属研究所在国产TDR-40炉上采用微型计算机自动控制晶体等径生长,减轻了劳动强度和减少了操作失误,有效地保证硅单晶质量和实得率。控制用微型计算机以Cromemco CSⅡ为
When using the CZ method to grow silicon single crystal, the temperature gradient in the solid and the melt is the main factor that determines the crystal growth rate. There is a complex relationship between growth rate, crystal diameter and furnace temperature, and the control of crystal diameter is a multivariable system with large heat capacity lag. Therefore, the conventional instrument is not competent. Shanghai Institute of Nonferrous Metals in the domestic TDR-40 furnace with a microcomputer automatically control the crystal growth, reduce labor intensity and reduce operational errors, and effectively ensure the quality and real silicon single crystal yield. Control microcomputer with Cromemco CSⅡ