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用AES,X-射线衍射和RBS等方法分析研究了热反应与离子束混合La,Ce及Nd稀土金属膜和硅反应生成硅化物的物理过程。实验表明:不同的生成条件如热反应温度或离子束混合的剂量能生成富金属硅化物,单硅化物和二硅化物,但最终稳定相都是二硅化物LaSi_2,CeSi_2和NdSi_2。氧的沾污不但影响生成的硅化物相和质量,甚至阻止硅化物的生成。镀膜时的衬底温度和防止氧化的保护层对硅化物薄膜的质量,平整度,均匀性等都有明显的影响。
The physical processes of thermal reaction and ion beam mixing of La, Ce and Nd rare earth metal films and silicon reaction to form silicide were studied by means of AES, X-ray diffraction and RBS. The experimental results show that metal silicides, monosilicides and disilicides can be formed by different reaction conditions such as thermal reaction temperature and ion beam mixing, but the final stable phases are disilicides LaSi_2, CeSi_2 and NdSi_2. Oxygen contamination affects not only the silicide phase and the quality of the formation but also the formation of silicides. The temperature of the substrate during coating and the protective layer for preventing oxidation have a significant influence on the quality, smoothness and uniformity of the silicide film.