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Room temperature photoluminescence (PL) spectra of InAs self-assembled quantum dots (QDs) deposited on aGaAs/InP and InP substrate are investigated. From the PL spectra, we find that the peak position of InAs Qdsappears redshift from 0.795 to 0.785eV after we insert a thin tensile GaAs layer between InAs QD layer and InPbuffer layer. In order to explain this phenomenon in theory, we examine the strain tensor in InAs quantum dotsby using a valence force field model and use a five-band k · p formalism to obtain the electronic structure. Thecalculated results show that the ground transition energy decreases from 0.789 to 0.780eV when the thin GaAslayer is inserted. Therefore, the PL peak position should appear redshift as shown in the experiment.