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In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is~4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ~-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.
In this Letter, we demonstrate a 1 × 4 low-crosstalk silicon photonics cascaded arrayed waveguide grating, which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2 μm buried oxide layer. on-chip transmission loss of this cascaded arrayed waveguide grating is ~ 4.0 dB and the fiber-towaveguide coupling loss is 1.8 dB / facet. The measured channel spacing is 6.4 nm. The adjacent crosstalk by characterization is very low, only -33.2 dB .Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ~ -12.5 dB, the crosstalk of more than 20 dB is dramatically improved in this cascaded device.