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对真空微电子二极管阵列的结构及其制造工艺技术进行了研究，重点集中在该类器件的核心，即场致发射尖锥阵列的制造及自封闭真空空腔形成技术的研究。采用不同的阴极发射尖锥材料，在优化的几何结构和工艺条件下研制成功了性能良好的自封闭低电压真空微电子二极管阵列，在U≤5V条件下，对Mo锥和Ti锥分别获得3．7μA每尖锥和9．5μA每尖锥的发射电流。同时对真空微电子二极管阵列的结构参数与电流-电压特性间的关系，影响场发射特性的各种因素进行了分析讨论。
The structure of the vacuum microelectronic diode array and its manufacturing technology are studied, with the focus on the core of such devices, namely the fabrication of field emission cone arrays and the research of self-enclosed vacuum cavity formation technology. A series of self-closing low-voltage vacuum microelectronic diode arrays with good performance were successfully fabricated under optimized geometry and process conditions using different cathode-emitting cone materials. When U≤5V, Mo cone and Ti cone were respectively obtained 3 .7μA per cone and 9.5μA per cone of emission current. At the same time, the relationship between structural parameters and current-voltage characteristics of vacuum microelectronic diode array and various factors that affect the field emission characteristics are analyzed and discussed.