Non-blocking 2×2 switching unit based on nested silicon microring resonators with high extinction ra

• 作 者: Jiayang Wu Xinhong Jiang Ting Pan Pan Cao Liang Zhang Xiaofeng Hu Yikai Su
• 机 构: State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electroni
• 出 处: Chinese Science Bulletin
• 发表日期: 2014年22期
• 关键词: switching Non-blocking 2 extinction crosstalk nested demonstration verified wafe

In this paper,we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators(MRRs)monolithically integrated on a silicon-on-insulator(SOI)wafer.High extinction ratios(ERs)of about 44.7/38.0 dB and low crosstalk values of about-37.5/-45.2 dB at cross/bar states are obtained with the fabricated device.The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and12.5 Gb/s non-return-to-zero(NRZ)signals.The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.

In this paper, we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators (MRRs) monolithically integrated on a silicon-on-insulator (SOI) wafer. High extinction ratios (ERs) of about 44.7 / 38.0 dB and low crosstalk values ​​of about -37.5 / -45.2 dB at cross / bar states are obtained with the fabricated device. The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and 12.5 Gb / s non -return-to-zero (NRZ) signals. The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.