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从器件表面势机理出发,考虑载流子浓度升高时费米势的变化,首次在二维泊松方程中引入新的费米势近似式,重构表面势源头方程,提出了一种直接基于表面势建立氮化镓高电子迁移率晶体管(GaN HEMT)器件模型的方法,建立了包括积累区和过渡区的物理基集约内核模型。表面势引入模型突破了现有的建模技术,给集约模型的建立提供可信的内核模型方程和理论基础。模型采用解析近似求解获得表面势,Pao-Sah模型验证可行性,I-V、C-V特性曲线与TCAD软件仿真的结果有很好的拟合,能准确描述各种偏置条件下GaN HEMT的电流、电荷特性。
Starting from the surface potential mechanism of the device, considering the change of Fermi potential when the carrier concentration increases, the new Fermi-potential approximation formula is introduced into the two-dimensional Poisson equation for the first time to reconstruct the surface potential source equation. A direct Based on the method of establishing a GaN HEMT device model with surface potential, a physics-based intensive kernel model including accumulation region and transition region was established. The surface potential introduction model breaks through the existing modeling techniques and provides credible kernel model equations and theoretical basis for the establishment of an intensive model. The model is approximated by the analytical solution to obtain the surface potential. The feasibility of the Pao-Sah model is validated. The results of the IV and CV curves are in good agreement with the results of the TCAD software simulation. The results can accurately describe the current and charge of GaN HEMT under various bias conditions characteristic.