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提出了一个新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距优化 .采用与平面结物理机理最接近的圆柱坐标对称解进行分析 ,给出了场限环结构极为简单的各电压和边界峰值电场表达式 .讨论了不同环间距和反偏电压对场限环电压的影响 ,并用流行的 2 - D半导体器件模拟工具 MEDICI对解析计算进行了验证 .根据临界电场击穿近似 ,讨论了环间距的优化设计并给出了优化环间距表达式 .在一定结深和掺杂浓度时 ,理论计算给出了与数值分析一致的优化环间距和最高击穿电压值 .
A new two-dimensional analytical method is proposed to predict the voltage distribution and the optimization of the peak electric field and the ring-to-ring spacing of the field-limited ring structure.The cylindrical coordinate symmetric solution which is closest to the physical mechanism of the plane-junction is analyzed and the field- Simple voltage and boundary peak electric field expressions are discussed.The effect of different ring spacings and reverse bias voltage on field limiting ring voltage is discussed.The analytical calculation is verified with MEDICI, a popular 2 - D semiconductor device simulation tool.According to the critical electric field impact The approximate design of ring spacing is discussed and the optimized ring spacing expression is given.With a certain junction depth and doping concentration, the theoretical calculation gives the optimized ring spacing and the highest breakdown voltage consistent with the numerical analysis.