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软磁敏感膜的磁性能是决定磁传感器性能的关键因素.为了保证加工工艺的兼容性,敏感膜通常采用磁控溅射法制备,其性能普遍较差,这严重制约了磁传感器的发展.因此,如何在硅基底上制备出符合磁传感器性能要求的敏感膜,同时加工过程与MEMS工艺兼容,是一个亟待解决的问题.相关研究表明,微观结构的变化有利于提高敏感膜的磁性能.本研究采用标准的MEMS技术制备了纳米多孔软磁敏感膜.对不同孔径的敏感膜进行了相关的表征和测试,分析了孔径大小对薄膜软磁性能的影响.结果表明,孔径大于50 nm的多孔结构可以降低敏感膜的Hs和Hc,100 nm多孔结构提高敏感膜的软磁性能效果最为明显.实验结论为制备方案的确定和敏感膜性能的改善提供了依据.“,”The magnetic properties of the soft magnetic sensitive film are the key factors to determine the performance of the magnetic sensor.In order to ensure process compatibility,the sensitive film is usually fabricated by magnetron sputtering,and its performance is generally poor,which greatly restricts the development of magnetic sensors.Therefore,how to fabricate thin sensitive film on silicon substrate which meets the performance requirements of magnetic sensor and which is compatible with the process of(micro electro mechanical system,MEMS)is an urgent problem to be solved.The correlated research indicated that,change of microstructure is conducive to improving the magnetic performances of sensitive film.In this paper,nanoporous thin films were prepared by standard MEMS technology.The related characterization and testing of sensitive films with different apertures were carried out,and the influence of aperture size on the soft magnetic properties of thin films was analyzed.The porous structure with larger than 50 nm pore size can reduce the Hs and Hc of sensitive film,and the effect of 100 nm structures is the most obvious to improve the soft performance of sensitive film.The conclusion of the experimental analysis provides support for the determination of preparation scheme and the performances improvement of sensitive film.